NNCD5.6MG-T1 查看數據表（PDF） - NEC => Renesas Technology
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NNCD5.6MG-T1
NEC => Renesas Technology
NNCD5.6MG-T1 Datasheet PDF : 4 Pages
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NNCD5.6MG to NNCD6.8MG
ELECTRICAL CHARACTERISTICS (TA = 25°C) (A-K1, A-K2, A-K3, A-K4)
Type No.
Breakdown VoltageNote 1
VBR (V)
DynamicNote 2
Impedance
ZZ (Ω)
Reverse
Leakage
IR (µA)
Capacitance
Ct (pF)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V) TYP.
TEST
CONDITION
NNCD5.6MG
NNCD6.2MG
NNCD6.8MG
5.3 6.3
5
80
5
5.7 6.7
5
50
5
6.2 7.1
5
30
5
5
2.5 26
VR = 0 V
2
3.0 20
f = 1 MHz
2
3.5 20
Note 1. Tested with pulse (40 ms)
2. ZZ is measured at IT give a small A.C. signal.
E.S.D Voltage
(kV)
MIN.
TEST
CONDITION
30 C = 150 pF
30 R = 330 Ω
30 (IEC61000-4-2)
TYPICAL CHARACTERISTICS (TA = 25°C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
Fig. 2 IT vs. VBR CHARACTERISTICS
200
30 x 30 x 1.6
P.C.B. (Glass Epoxy)
100 m
NNCD6.2MG
NNCD5.6MG
NNCD6.8MG
150
100
10 m
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
1m
100 µ
10 µ
5
6
7
8
VBR - Breakdown Voltage - V
2
Data Sheet D13910EJ2V0DS00
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