MAGE-100809-600
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M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
Match & Start : MAGE-100809-600
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
M/A-COM Technology Solutions, Inc.
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
Next generation high power RF semiconductor technology
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty
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