MDS170 数据手册, MDS170 数据表 PDF - DATSAHEETQ

MDS170

数据手册 ( 数据表 )

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产品描述 (功能)

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GHz Technology

MDS170

170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz high power COMMON BASE bipolar transistor

GHz Technology

170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz high power COMMON BASE bipolar transistor

Match & Start : MDS170

MagnaChip Semiconductor

Single N-Channel Trench MOSFET 30V, 17A, 6.5mΩ

GHz Technology

170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz high power COMMON BASE bipolar transistor

MagnaChip Semiconductor

Single N-channel Trench MOSFET 30V, 13.1A, 15.9mΩ

MagnaChip Semiconductor

Single N-Channel Trench MOSFET 30V, 12A, 12mΩ

MagnaChip Semiconductor

Single N-channel Trench MOSFET 30V, 16.9A, 10.1mΩ

Formosa Technology

SMD Schottky Bridge Rectifier Low VF

Zarlink Semiconductor Inc

Unmanaged 9-Port 10/100 Mbps Ethernet Switch

Formosa Technology

SMD Schottky Bridge Rectifier Low VF

Zarlink Semiconductor Inc

Unmanaged 5-Port 10/100 Mbps Ethernet Switch

GeneSiC Semiconductor, Inc.

Three Phase Silicon Bridge Rectifier

Nanjing International Group Co

Glass Passivated Three Phase Rectifier Bridge

GeneSiC Semiconductor, Inc.

Three Phase Silicon Bridge Rectifier

MagnaChip Semiconductor

Single N-Channel Trench MOSFET 30V, 17A, 6.5mΩ

Nanjing International Group Co

Glass Passivated Three Phase Rectifier Bridge

Yangzhou yangjie electronic co., Ltd

Three Phase Rectifier Bridge

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