PTFA220041M
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Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Match & Start : PTFA220041M
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
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