![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz