RJK03A4DPA
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Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 42A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 42A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Match & Start : RJK03A4DPA
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 45A, 3.2m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
30V, 42A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
30V, 40A, 4.5m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Electronics
30V, 35A, 4.6m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
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