H7N0310LD, H7N0310LS, H7N0310LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 30
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
I
—
GSS
Zero gate voltege drain current
I
—
DSS
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
—
resistance
—
Forward transfer admittance
Input capacitance
|yfs|
21
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd —
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse recovery trr
—
time
Notes: 1. Pulse test
Typ Max
—
—
—
—
—
±10
—
10
—
2.5
8.0 10
13
19
35
—
1400 —
380 —
210 —
24
—
4.8 —
4.6 —
21
—
250 —
55
—
16
—
0.90 —
35
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
V = ±16 V, V = 0
GS
DS
V = 30 V, V = 0
DS
GS
ID = 1 mA, VDS = 10 VNote1
ID = 15 A, VGS = 10 VNote1
ID = 15 A, VGS = 5 VNote1
ID = 15 A, VDS = 10 VNote1
V = 10 V
DS
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
RL = 0.67 Ω
Rg = 4.7 Ω
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0
diF/ dt = 50 A/µs
Rev.3, Aug. 2002, page 3 of 3