MMST4401(RevA) 查看數據表（PDF） - ROHM Semiconductor
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MMST4401 Datasheet PDF : 4 Pages
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Transistors
SST4401 / MMST4401 / 2N4401
1.8
Ta=25°C
1000
Ta=25°C
VCE=10V
IC / IB=10
1.6
1.2
0.8
0.4
0
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation
characteristics
100
VCC=30V
10V
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.8 Turn-on time vs. collector
current
500
Ta=25°C
VCC=30V
IC / IB=10
100
10
5
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.9 Rise time vs. collector
current
1000
100
Ta=25°C
VCC=30V
IC=10IB1=10IB2
1000
100
100
Ta=25°C
VCC=30V
IC=10IB1=10IB2
Ta=25°C
f=1MHz
Cib
10
Cob
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.10 Storage time vs. collector
current
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.11 Fall time vs. collector
current
1
0.1
1.0
10
100
REVERSE BIAS VOLTAGE(V)
Fig.12 Input / output capacitance
vs. voltage
100
100MHz 250MHz 300MHz
200MHz
10
Ta=25°C
1
250MHz
1000
100
Ta=25°C
VCE=10V
0.1
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.14 Gain bandwidth product
vs. collector current
Rev.A
3/3
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