Q68000-A8320 查看數據表（PDF） - Infineon Technologies

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产品描述 (功能)

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Q68000-A8320

NPN Silicon Darlington Transistor

Infineon Technologies 

SMBT 6427

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

Collector-base breakdown voltage

IC = 100 µA

Emitter-base breakdown voltage, IE = 10 µA

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150 ˚C

Collector cutoff current

VCE = 30 V, IB = 0

Emitter-base cutoff current

VEB = 10 V, IC = 0

DC current gain

IC = 10 mA, VCE = 5 V

IC = 100 mA, VCE = 5 V

IC = 500 mA, VCE = 5 V

Collector-emitter saturation voltage1)

IC = 50 mA, IB = 0.5 mA

IC = 500 mA, IB = 0.5 mA

Base-emitter saturation voltage1)

IC = 500 mA, IB = 0.5 mA

Base-emitter voltage

IC = 50 mA, VCE = 5 V

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 1 mA, VCE = 5 V, RS = 100 kΩ

f = 1 kHz to 15 kHz

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 40

–

V(BR)CB0 40

–

V(BR)EB0 12

–

ICB0

–

–

–

–

ICE0

–

–

IEB0

–

–

hFE

VCEsat

VBEsat

10000 –

20000 –

14000 –

–

–

–

–

–

–

VBE(on)

–

–

–

V

–

–

50

nA

10

µA

1

µA

50

nA

–

100000

200000

140000

V

1.2

1.5

2.0

1.75

fT

130 –

–

MHz

Cobo

–

–

7

pF

Cibo

–

–

25

NF

–

–

10

dB

Semiconductor Group

2

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