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MJE5740(2002) 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MJE5740
(Rev.:2002)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJE5740 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MJE5740 MJE5742
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 mA, IB = 0)
MJE5740 VCEO(sus)
300
MJE5742
400
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Clamped Inductive SOA with Base Reverse Biased
IS/b
RBSOA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC =
100_C)
VCE(sat)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
VBE(sat)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Diode Forward Voltage (4) (IF = 5 Adc)
Vf
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Typical Resistive Load (Table 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time
Fall Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 µs,
Duty Cycle v 1%)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Inductive Load, Clamped (Table 1)
td
tr
ts
tf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
tsv
tc
Typ
Max
Unit
Vdc
1
mAdc
5
75
mAdc
See Figure 6
See Figure 7
Typ
Max
Unit
100
400
2
Vdc
3
2.2
2.5
Vdc
3.5
2.4
2.5
Vdc
0.04
µs
0.5
µs
8
µs
2
µs
4
µs
2
µs
(continued)
(3) Pulse Test: Pulse Width 300 µs, Duty Cycle = 2%.
(4) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that
the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
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