Q68000-A8322 查看數據表（PDF） - Infineon Technologies

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Q68000-A8322

NPN Silicon Transistors

Infineon Technologies 

SMBT 6428

SMBT 6429

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

SMBT 6428

SMBT 6429

Collector-base breakdown voltage

IC = 10 µA

SMBT 6428

SMBT 6429

Emitter-base breakdown voltage

IE = 1 µA

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150 ˚C

Collector cutoff current

VCE = 30 V, IB = 0

Emitter-base cutoff current

VEB = 5 V, IC = 0

DC current gain

IC = 10 µA, VCE = 5 V

IC = 100 µA, VCE = 5 V

IC = 1 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

SMBT 6428

SMBT 6429

SMBT 6428

SMBT 6429

SMBT 6428

SMBT 6429

SMBT 6428

SMBT 6429

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter voltage

IC = 1 mA, VCE = 5 V

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

50

–

45

–

V(BR)CB0

60

–

55

–

V(BR)EB0 6

–

ICB0

–

–

–

–

ICE0

–

–

IEB0

–

–

hFE

VCEsat

VBE(on)

250 –

500 –

250 –

500 –

250 –

500 –

250 –

500 –

–

–

–

–

0.56 –

V

–

–

–

–

–

10 nA

10

µA

100 nA

10

–

–

–

650

1250

–

–

–

–

V

0.2

0.6

0.66

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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