2SC2328A 查看數據表（PDF） - Unisonic Technologies

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2SC2328A

AUDIO POWER AMPLIFIER

Unisonic Technologies 

2SC2328A

NPN EPITAXIAL SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

30

V

VEBO

5

V

Collector Dissipation

TO-92

TO-92NL

PC

500

625

mW

Collector Current

Junction Temperature

IC

2

A

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain (Note)

Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

Output Capacitace

Current Gain Bandwidth Product

 CLASSIFICATION OF hFE

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VBE(ON)

VCE(SAT)

COB

fT

TEST CONDITIONS

IC=100μA, IE=0

IC=10mA, IB=0

IE=1mA,IC=0

VCB=30V, IE=0

VBE=5V, IC=0

VCE=2V, IC=500mA

VCE=2V, IC=500mA

IC=1.5A, IB=0.03A

VCB =10V, IE =0, f=1MHz

VCE=2V, IC=500mA

MIN TYP MAX UNIT

30

V

30

V

5

V

100 nA

100 nA

100

320

1

V

2

V

30

pF

120

MHz

RANK

RANGE

O

100-200

Y

160-320

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R211-008.E

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