BCW71 查看數據表（PDF） - Fairchild Semiconductor
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BCW71 Datasheet PDF : 4 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
45
Voltage
V(BR)CBO
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0
50
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
ICBO
Collector-Cutoff Current
VCB = 20 V, IE = 0
VCB = 20 V, IE = 0, TA = 100°C
V
V
V
100 µA
10
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, IB = 0.5 mA
IC = 50 mA, IB = 2.5 mA
IC = 2.0 mA, VCE = 5.0 V
110
220
0.25 V
0.85
V
0.6
0.75 V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Cibo
NF
Output Capacitance
Input Capacitance
Noise Figure
IC = 10 mA, VCE = 5.0 V,
f = 35 MHz
VCE = 10 V, IE = 0, f = 1.0 MHz
VEB = 0.5 V, IC = 0, f = 1.0 MHz
IC = 0.2 mA, VCE = 5.0 V,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
330
MHz
4.0 pF
9.0
pF
10 dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
125 °C
300
Vce = 5V
25 °C
200
- 40 °C
100
0
10
20 30 50
100
200 300 500
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
25 °C
0.2
0.1
125 °C
- 40 °C
1
10
100
400
I C - COLLECTOR CURRENT (mA)
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