3NV04D 查看數據表（PDF） - STMicroelectronics

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3NV04D

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics 

®

VNS3NV04D

“OMNIFET II”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE

RDS(on)

VNS3NV04D 120 mΩ (*)

Ilim

3.5 A (*)

Vclamp

40 V (*)

(*)Per each device

n LINEAR CURRENT LIMITATION

n THERMAL SHUT DOWN

n SHORT CIRCUIT PROTECTION

n INTEGRATED CLAMP

n LOW CURRENT DRAWN FROM INPUT PIN

n DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

n ESD PROTECTION

n DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNS3NV04D is a device formed by two

monolithic OMNIFET II chips housed in a

standard SO-8 package. The OMNIFET II are

designed in STMicroelectronics VIPower M0-3

Technology: they are intended for replacement of

standard Power MOSFETS from DC up to 50KHz

BLOCK DIAGRAM

SO-8

applications. Built in thermal shutdown, linear

current limitation and overvoltage clamp protects

the chip in harsh environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

INPUT1

DRAIN1

DRAIN2

GATE

CONTROL

OVERVOLTAGE

CLAMP

OVERVOLTAGE

CLAMP

OVER

TEMPERATURE

LINEAR

CURRENT

LIMITER

LINEAR

CURRENT

LIMITER

SOURCE1

SOURCE2

GATE

CONTROL

OVER

TEMPERATURE

INPUT2

February 2003

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