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HT27C010 查看數據表(PDF) - Holtek Semiconductor

零件编号
产品描述 (功能)
生产厂家
HT27C010
Holtek
Holtek Semiconductor Holtek
HT27C010 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
HT27C010
to output (tCE). Data is available at the outputs
(tOE) after the falling edge of OE, assuming the
CE has been LOW and addresses have been
stable for at least tACC-tOE.
Standby mode
The HT27C010 has CMOS standby mode which
reduces the maximum VCC current to 10µA. It
is placed in CMOS standby when CE is at
VCC±0.3V. The HT27C010 also has a TTL-
standby mode which reduces the maximum
VCC current to 1.0mA. It is placed in TTL-
standby when CE is at VIH. When in standby
mode, the outputs are in a high-impedance
state, independent of the OE input.
Two-line output control function
To accommodate multiple memory connections,
a two-line control function is provided to allow
for:
Low memory power dissipation
Assurance that output bus contention will not
occur
It is recommended that CE be decoded and used
as the primary device-selection function, while
OE be made a common connection to the READ
line from the system control bus. This assures
that all deselected memory devices are in their
low-power standby mode and that the output
pins are only active when data is desired from a
particular memory device.
System considerations
During the switch between active and standby
conditions, transient current peaks are pro-
duced on the rising and falling edges of Chip
Enable. The magnitude of these transient cur-
rent peaks is dependent on the output capaci-
tance loading of the device. At a minimum, a
0.1µF ceramic capacitor (high frequency, low
inherent inductance) should be used on each
device between VCC and VPP to minimize tran-
sient effects. In addition, to overcome the volt-
age drop caused by the inductive effects of the
printed circuit board traces on EPROM arrays,
a 4.7µF bulk electrolytic capacitor should be
used between VCC and VPP for each eight de-
vices. The location of the capacitor should be
close to where the power supply is connected to
the array.
Operation mode truth table
All the operation modes are shown in the table following.
Mode
CE
OE PGM A0
A1
A9 VPP Output
Read
VIL
VIL X (2)
X
Output Disable
VIL
VIH
X
X
Standby (TTL)
VIH
X
X
X
Standby (CMOS)
VCC± 0.3V X
X
X
Program
VIL
VIH
VIL
X
Program Verify
VIL
VIL
VIH
X
Product Inhibit
VIH
X
X
X
Manufacturer Code (3)
VIL
VIL
X
VIL
Device Type Code (3)
VIL
VIL
X
VIH
X
X
VCC Dout
X
X
VCC High Z
X
X
VCC High Z
X
X
VCC High Z
X
X
VPP
DIN
X
X
VPP
DOUT
X
X
VPP High Z
VIH VH (1) VCC
1C
VIH VH (1) VCC
01
Notes: (1) VH=12.0V ± 0.5V
(2) X=Either VIH or VIL
(3) For Manufacturer Code and Device Code, A1=VIH, When A1=VIL, both
codes will read 7F
7
6th May ’99

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