CLP30-200B1 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

CLP30-200B1

ASD (Application Specific Devices) Overvoltage and overcurrent protection for telecom line

STMicroelectronics 

Characteristics

CLP30-200B1

Table 3. Absolute maximum ratings (RSENSE = 3 Ω, Tamb = 25° C)

Symbol

Parameter

Value Unit

IPP

ITSM

Tstg

Tj

TL

Line to GND peak pulse current

– 10/1000 µs (open circuit voltage wave shape 10/1000 µs)

– 5/310 µs (open circuit voltage wave shape 10/700 µs)

Non repetitive surge peak on-state current

F = 50 Hz

tp = 10 ms

tp = 200 ms

tp = 1 s

Storage temperature range

Maximum junction temperature

Lead temperature for soldering during 10 s.

30

A

40

8.5

4.5

A

3.5

-40 to

+150

°C

150

260

°C

Table 4.

Symbol

Electrical characteristics (RSENSE = 3 Ω, Tamb = 25° C)

Parameter

Test condtions

Min

Max Unit

VLG = 200 V

ILGL Line to GND leakage current Measured between TIP

(or RING) and GND

10 µA

VLG

VSWON

Line to GND operating voltage

Line to GND voltage at SW1 or Measured at 50 Hz between TIPL

SW2 switching-on

(or RINGL) and GND,one cycle

200 V

290 V

ISWOFF

Line to GND negative current

at SW1 or SW2 switching-off

Refer to test circuit fig 9

150

mA

ISWON

Line current at SW1 or SW2

switching-on

Positive surge

Negative surge

220

280

320

380

mA

C Line to GND capacitance

VLG = 0 V

VOSC = 200 mVRMS F = 1MHz

100 pF

Figure 3. Test circuit for ISWOFF parameter: GO-NO GO test

TIPL or RINGL

R

VBAT = -48 V

D.U.T

GND

-VP

Surge generator

This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.

TEST PROCEDURE:

- Adjust the current level at the IH value by short circuiting the D.U.T.

- Fire the D.U.T. with a surge current: IPP = 10A, 10/1000 µs

- The D.U.T. will come back to the off-state within a duration of 50 ms max.

4/15

Share Link: