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TPP25011 查看數據表(PDF) - STMicroelectronics

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TPP25011 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
®
Application Specific Discretes
A.S.D.™
TPP25011
OVERVOLTAGE and OVERCURRENT
PROTECTION for TELECOM LINE
FEATURES
s UNIDIRECTIONAL FUNCTION
s PROGRAMMABLE BREAKDOWN VOLTAGE
UP TO 250 V
s PROGRAMMABLE CURRENT LIMITATION
FROM 40 mA TO 500 mA
s SURGE CURRENT CAPABILITY
IPP = 30A 10/1000 µs
DESCRIPTION
Dedicated to sensitive telecom equipment protec-
tion, this device can provide both voltage and cur-
rent triggered protection with a very tight tolerance.
The breakdown voltage can be easily programmed
by using an external zener diode.
A multiple protection mode can be also performed
when using several zener diodes, providing to
each line interface an optimized protection level.
The current limiting function is achieved with the
use of a resistor between the gate and the cath-
ode. The value of the resistor will determine the
level of the desired current.
SO-8
SCHEMATIC DIAGRAM
COMPLIES WITH THE FOLLOWING STANDARDS :
CCITT K17 :
10/700 µs
5/310 µs
VDE 0433 :
10/700 µs
5/310 µs
CNET :
0.5/700 µs
0.2/310 µs
FCC part 68 :
2/10 µs
2/10 µs
BELLCORE
TR-NWT-000974 :
10/1000 µs
10/1000 µs
(*) with series resistors or PTC.
1.5 kV
38 A
2k V
40 A (*)
1.5 kV
38 A
2.5 kV
75 A (*)
1 kV
30 A (*)
TM: ASD is trademarks of STMicroelectronics.
October 2003 - Ed: 5
1/7

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