2SJ357-T2 查看數據表（PDF） - NEC => Renesas Technology

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2SJ357-T2

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

NEC => Renesas Technology 

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

–10

Pulsed

–8

–4.5 V

–6

–4.0 V

–3.5 V

–4

–3.0 V

–2

–2.5 V

VGS = –2.0 V

0

–1

–2

–3

–4

–5

VDS – Drain to Source Voltage – V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

10

VDS = –10 V

Pulsed

1

TA = –25 °C

0.1

0.01

TA = 0 °C

TA = 25 °C

TA = 75 °C

TA = 150 °C

0.001

–0.0001 –0.001 –0.01

–0.1

–1

ID – Drain Current – A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

0.3

VGS = –10 V

Pulsed

TA = 150 °C TA = 75 °C

0.2

0.1

TA = 25 °C TA = 0 °C TA = –25 °C

0

–0.001 –0.01

–0.1

–1

–10

ID – Drain Current – A

2SJ357

TRANSFER CHARACTERISTICS

–10 VDS = –10 V

Pulsed

–1

TA = 150 °C

–0.1

–0.01

–0.001

–0.0001

–0.00001

TA = –25 °C

TA = 0 °C

TA = 25 °C

TA = 75 °C

–1

–2

–3

–4

VGS – Gate to Source Voltage – V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRINT

0.5

VGS = –4 V

Pulsed

0.4

TA = 150 °C TA = 75 °C

0.3

0.2

0.1 TA = 25 °C TA = 0 °C

TA = –25 °C

0

–0.001 –0.01

–0.1

–1

–10

ID – Drain Current – A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0.6

Pulsed

0.4

ID = 3.0 A

0.2

ID = 1.5 A

0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20

VGS – Gate to Source Voltage – V

Data Sheet D10803EJ3V0DS00

3

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