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2SJ353 查看數據表(PDF) - NEC => Renesas Technology
零件编号
产品描述 (功能)
生产厂家
2SJ353
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
2SJ353 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
SYMBOL
Drain Cut-Off Current
I
DSS
Gate Leakage Current
I
GSS
Gate Cut-Off Voltage
V
GS(off)
Forward Transfer Admittance
|y
fs
|
Drain to Source On-State Resistance R
DS(on)1
Drain to Source On-State Resistance R
DS(on)2
Input Capacitance
C
iss
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
TEST CONDITIONS
V
DS
= –60 V, V
GS
= 0
V
GS
= –16/+10 V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –1.0 A
V
GS
= –4 V, I
D
= –0.8 A
V
GS
= –10 V, I
D
= –1.0 A
V
DS
= –10 V, V
GS
= 0,
f = 1.0 MHz
V
DD
= –30 V, I
D
= –1.0 A
V
GS(on)
= –10 V,
R
G
= 10
Ω
, R
L
= 30
Ω
2SJ353
MIN.
–1.0
1.0
TYP.
–1.6
0.58
0.33
320
200
70
5
15
40
20
MAX.
–10
±
10
–2.0
0.68
0.37
UNIT
µ
A
µ
A
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
2
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