BSP170 查看數據表（PDF） - Siemens AG

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BSP170

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 170

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≥ 2 * ID * RDS(on)max, ID = -1.7 A

1

Input capacitance

Ciss

VGS = 0 V, VDS = -25 V, f = 1 MHz

-

Output capacitance

Coss

VGS = 0 V, VDS = -25 V, f = 1 MHz

-

Reverse transfer capacitance

Crss

VGS = 0 V, VDS = -25 V, f = 1 MHz

-

Turn-on delay time

td(on)

VDD = -30 V, VGS = -10 V, ID = -0.3 A

RG = 50 Ω

-

Rise time

tr

VDD = -30 V, VGS = -10 V, ID = -0.3 A

RG = 50 Ω

-

Turn-off delay time

td(off)

VDD = -30 V, VGS = -10 V, ID = 0.3 A

RG = 50 Ω

-

Fall time

tf

VDD = -30 V, VGS = -10 V, ID = -0.3 A

RG = 50 Ω

-

S

1.35 -

pF

800

1100

250

375

95

145

ns

25

38

80

120

130

175

150

200

Semiconductor Group

3

22/05/1997

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