BSP170 查看數據表（PDF） - Siemens AG

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BSP170

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 170

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs , Tj = 25 °C

-3.8

A

Ptot = 2lkjiWh g

f

-3.2

ID

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

VGS [V]

a

-4.0

eb

-4.5

c

-5.0

d

-5.5

e

-6.0

df

-6.5

g

-7.0

h

-7.5

i

-8.0

cj

k

-9.0

-10.0

l

-20.0

b

-0.4

a

0.0

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0

VDS

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

1.1

Ω

a

b

c

d

RDS (on) 0.9

0.8

0.7

0.6

0.5

e

0.4

f

0.3

g

k i hj

0.2

VGS [V] =

0.1 a b c d e f g h i j k

-4.05 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0

0.0

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 A -3.2

ID

Typ. transfer characteristics ID = f(VGS)

parameter: tp = 80 µs

VDS≥ 2 x ID x RDS(on)max

-10

A

ID

-8

-7

-6

-5

-4

-3

-2

-1

0

0 -1 -2 -3 -4 -5 -6 -7 -8 V -10

VGS

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max

3.0

S

2.6

gfs 2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 -1 -2 -3 -4 -5 -6 -7 -8 A -10

ID

Semiconductor Group

6

22/05/1997

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