J495 查看數據表（PDF） - NEC => Renesas Technology
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J495 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
VGS = –4 V
60
VGS=-10 V
40
20
0
ID = –15 A
–50
0
50 100 150
Tch - Channel Temperature - °C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
10
1
–0.1
–1
–10
–100
IF - Diode Current - A
2SJ495
–1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
–100
VGS = –4 V
–10
VGS = 0
–1
0
–1.0
–2.0
–3.0
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1
–0.1
td(off)
tf
tr
td(on)
VDD = –30 V
VGS = –10 V
RG =10 Ω
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–80
ID = –30A
–14
–60
VDD=–48 V
–40
–30 V
–15 V
–12
VGS
–10
–8
–6
–20
–4
–2
VDS
0
0
40
80
120
160
QG - Gate Charge - nC
5
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