BPW16N 查看數據表（PDF） - Vishay Semiconductors
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BPW16N Datasheet PDF : 5 Pages
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www.vishay.com
BPW16N
Vishay Semiconductors
Silicon NPN Phototransistor
94 8638
DESCRIPTION
BPW16N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-¾ plastic package with flat window. It
is sensitive to visible and near infrared radiation. On PCB
this package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 40°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW16N
Ica (mA)
0.14
Note
• Test condition see table “Basic Characteristics”
ϕ (deg)
± 40
λ0.1 (nm)
450 to 1040
ORDERING INFORMATION
ORDERING CODE
BPW16N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
VCEO
Emitter collector voltage
VECO
Collector current
Collector peak current
Power dissipation
IC
tp/T = 0.5, tp ≤ 10 ms
ICM
Tamb ≤ 55 °C
PV
Junction temperature
Tj
Operating temperature range
Tamb
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t≤3s
Connected with Cu wire, 0.14 mm2
Tstg
Tsd
RthJA
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 24-Aug-11
1
Document Number: 81515
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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