VSC7810(2001) 查看數據表（PDF） - Vitesse Semiconductor

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VSC7810
(Rev.:2001)

Photodetector/Transimpedance Amplifier Family for Optical Communication

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

Data Sheet

VSC7810

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Temperature Dependence of Operating Parameters

This section describes the dependence of important operating parameters shown in Table 1 as a function of

die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equiva-

lent case temperature, the following thermal characteristics of the package are provided (note that the thermal

conductivity is identical for TO-46 and TO-56 package styles.

Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages

Chip Size

Chip Area A

Die Height (TDIE)

Epoxy Thickness (TEPOXY)

Header Thickness (THEADER)

(Average for TO-46 and TO-56 package)

0.168cm x 0.104cm

0.015cm2

0.066cm

0.0076cm

0.115cm

K GaAs

K epoxy

K kovar

Thermal Conductivities

0.55W/cm °C

0.0186W/cm °C

0.17W/cm °C

Thermal Path

TJ

θGaAs

θEXPOXY

θKOVAR

TC

θGaAs = Tdie =

0.066 = 8 °C/W

KGaAsA

0.55 x 0.015

θepoxy = Tepoxy =

0.0076 = 27.24 °C/W

KepoxyA 0.0186 x 0.015

θkovar = Tkovar =

0.12

= 47 °C/W

KkovarA

0.17 x 0.015

θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W

Example:

For VSC7810 at nominal supply current of 25mA and Vss = 5V

Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C

G52145-0, Rev 4.1

04/05/01

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Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

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