VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Data Sheet
VSC7810
Typical Operating Characteristics
35
33
31
29
27
25
23
21
19
17
15
10
IDD vs. Die Temperature
5.5V
4.5V
5V
25
50
80
100
Die Temperature ( C)
3.00
2.80
2.60
2.40
2.20
2.00
1.80
1.60
1.40
1.20
1.00
10
Responsitivity vs. Die Temperature
(Small-Signal Optical Responsitivity at 850nm)
5.5V
4.5V
5V
25
50
80
100
Die Temperature ( C)
55
54
53
52
51
50
49
48
47
46
45
10
Duty-Cycle Distortion vs. Die Temperature
4.5V
5.5V
5V
25
50
80
100
Die Temperature ( C)
1400
Bandwidth vs. Die Temperature
1300
1200
5.5V
1100
4.5V
5V
1000
900
800
10
25
50
80
100
Die Temperature ( C)
RMS Jitter with PRBS7 Data vs. Die Temperature
60
50
5V
40
4.5V
30
5.5V
20
10
0
10
25
50
80
100
Die Temperature ( C)
RMS Differential Output Noise Voltage
vs. Die Temperature
1.00
0.90
0.80
5.5V
0.70
0.60
0.50
4.5V
0.40
5V
0.30
0.20
0.10
0.00
10
25
50
80
100
Die Temperature ( C)
Page 6
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52145-0, Rev 4.1
04/05/01