VSC7810-X 查看數據表（PDF） - Vitesse Semiconductor

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VSC7810-X

Photodetector/transimpedance amplifier for optical communication. 5V supply

Vitesse Semiconductor 

VSC7810

Data Sheet

TEMPERATURE DEPENDENCE OF OPERATING PARAMETERS

This section describes the dependence of important operating parameters shown in Table 4 as a function of die (or

equivalently junction) tempeature and power supply. In order to relate the die temperature to an equivalent case

temperature, the following thermal characteristics of the package are provided (note that the thermal conductivity is

identical for TO-46 and TO-56 package styles.

Table 4: Thermal Resistance Calculation for TO-56 and TO-46 Packages

Parameter

Chip Size

Chip Area A

Die Height (TDIE)

Epoxy Thickness (TEPOXY)

Header Thickness (THEADER)

(Average for TO-46 and TO-56 package)

Value

0.168cm x 0.104cm

0.015cm2

0.066cm

0.0076cm

0.115cm

K GaAs

K epoxy

K kovar

Thermal Conductivities

0.55W/cm °C

0.0186W/cm °C

0.17W/cm °C

Equivalent Circuit

Thermal Path

TJ

θGaAs

θEXPOXY

θKOVAR

TC

θGaAs = Tdie =

0.066 = 8 °C/W

KGaAsA

0.55 x 0.015

θepoxy = Tepoxy =

0.0076 = 27.24 °C/W

KepoxyA 0.0186 x 0.015

θkovar = Tkovar =

0.12

= 47 °C/W

KkovarA

0.17 x 0.015

θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W

Example:

For VSC7810 at nominal supply current of 25mA and Vss = 5V

Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C

8 of 16

G52145, Rev 4.2

4/4/02

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