VSC7810-X 查看數據表（PDF） - Vitesse Semiconductor
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VSC7810-X
Vitesse Semiconductor
VSC7810-X Datasheet PDF : 16 Pages
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BARE DIE AND PACKAGE INFORMATION
VSC7810
Data Sheet
1481µm (58.3mils)
Pad 3
DOUTN
Pad 4
GND
835µm
(32.9mils)
VSC7810
Top View
Pad 2
DOUTP
Pad 1
GND
Die Size:
835µm x 1481µm (32.9mils x 58.3mils)
Die Thickness:
635µm (26mils)
Pad Sizes:
108µm x 108µm (4.3mils x 4.3mils)
244µm x 108µm (9.6mils x 4.3mils)
Pad Passivation Openings: 86µm x 86µm (3.4mils x 3.4mils)
223µm x 86µm (8.8mils x 3.4mils)
Scribe Size:
157µm (6.2mils)
Figure 3. Pad Diagram for Bare Die (-X)
Pad 5
GND
Pad 6
VDD
157µm
(6.2mils)
Table 5. Pad Coordinates for Bare Die (-X)
Signal Name
GND
DOUTP
DOUTN
GND
GND
VDD
Pad
Number
1
2
3
4
5
6
Coordinates (µm)
X
Y
55
943.6
55
1093.6
780
1093.6
780
943.6
596.7
61.4
244.2
61.4
Description
Ground
Data output, true (with reference to incident light)
Data output, complement (with reference to incident light)
Ground
Ground
+5V Power Supply
G52145, Rev 4.2
4/4/02
9 of 16
Confidential
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