RL1N1800F(2001) 查看數據表（PDF） - Rectron Semiconductor
零件编号
产品描述 (功能)
生产厂家
RL1N1800F Datasheet PDF : 2 Pages
| |||
RATING AND CHARACTERISTIC CURVES ( RL1N1000F THRU RL1N1800F )
FIG. 1 - FORWARD CURRENT
DERATING CURVE
600
500
400
300
200
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
100
25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( )
FIG. 3 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
10
0
1 2 4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1.0
.8
.6
.4
.2
.1
.06
.04
.02
TJ=25
Pulse Width = 300uS
1% Duty Cycle
.01
.8
.9
1.0
1.1
1.2
1.3
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ = 25
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
(-)
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
0
-0.25A
-1.0A
1cm SET TIME BASE FOR
50/100 ns/cm
RECTRON
Share Link: 