RL1N1800F-T 查看數據表（PDF） - Rectron Semiconductor

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RL1N1800F-T

SILICON RECTIFIER

Rectron Semiconductor 

RATING AND CHARACTERISTIC CURVES ( RL1N1000F THRU RL1N1800F )

2.0

1000

1.5

1.0

0.5 Single Phase Half Wave 60Hz

Resistive or Inductive Load

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE, (OC)

FIG.1 TYPICAL FORWARD CURRENT

DERATING CURVE

20

10

4

2

1.0

.4

.2

.1

TJ = 25

Pulse Width=300uS

1% Duty Cycle

.04

.02

.01

1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG.3 MAXIMUM INSTANTANEOUS FORWARD

CHARACTERISTICS

30

25

100

TA = 100 OC

10

1.0

0.1

TA = 25 OC

0.01

0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG.2 MAXIMUM REVERSE

CHARACTERISTICS

40

TJ = 25 OC

20

10

8

6

4

2

1

0.1

0.4 1.0

4 10

40 80

REVERSE VOLTAGE, (V)

FIG.4 TYPICAL JUNCTION CAPACITANCE

8.3mS Single Half Sine-Wave

JEDEC Method

20

15

10

0

1

2

4 6 8 10 20 40

80 100

NUMBER OF CYCLES AT 60Hz

FIG.5 MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

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