RPT-34PB3F 查看數據表（PDF） - ROHM Semiconductor
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RPT-34PB3F Datasheet PDF : 3 Pages
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Phototransistor, top view type
RPT-34PB3F
The RPT-34PB3F is a silicon planar phototransistor.
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
Applications
Optical control equipment
Features
High sensitivity.
Dimensions (Units : mm)
φ3.8±0.3
φ3.5
φ3.1±0.2
Notes :
1. Unspecfied tolerance
shall be ±0.2.
2. Dimension in parenthesis
are show for reference.
2−0.6
2−0.5
2
1
(2.5)
Internal connection diagram
1
Emitter
2
Collector
Absolute maximum ratings (Ta = 25C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
Limits
Unit
VCEO
32
V
VECO
5
V
IC
30
mA
PC
150
mW
Topr
−25~+85
°C
Tstg
−30~+85
°C
Electrical and optical characteristics (Ta = 25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Light current
IC
2.0
−
−
mA VCE=5V, E=500LX
Dark current
ICEO
−
−
0.5 μA VCE=10V(Black box)
Peak sensitivity wavelength
λP
− 800
−
nm
−
Collector-emitter saturation voltage
VCE(sat)
−
−
0.4
V IC=1mA, E=500LX
Half-angle
θ1 / 2
−
±36
−
deg
−
Response time
tr·tf
−
10
−
μs VCC=5V, IC=1mA, RL=100Ω
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.A
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