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GC4494 查看數據表(PDF) - Microsemi Corporation

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GC4494
Microsemi
Microsemi Corporation Microsemi
GC4494 Datasheet PDF : 4 Pages
1 2 3 4
GC4410 – GC4495
TM
®
CONTROL DEVICES – HIGH VOLTAGE PIN DIODES
RoHS Compliant
.
ELECTRICAL CHARACTERISTICS AT 25 ˚C
Model Number
Vb (V)
IR=10uA
(Min)
Cj1 (pF)
VR = 50V
(Max)
Rs 2 ()
IF = 100 mA
F=100 MHz
(Max)
TL (uS)
IR=6 mA
IF=10 mA
(Typ)
P2 (˚C/W)
THERMAL
RESISTANCE
(Max)
GC4410
100
0.10
0.6
0.4
40
GC4411
100
0.25
0.5
0.6
25
GC4412
100
0.50
0.4
0.8
20
GC44133
100
0.75
0.3
1.2
10
GC4430
300
0.10
1.5
0.6
40
GC4431
300
0.25
1.2
1.2
30
GC4432
300
0.50
1.0
1.5
20
GC44333
300
0.75
0.8
2.0
10
GC4490
750
0.10
1.5
1.0
30
GC4491
750
0.25
1.2
2.0
25
GC4492
750
0.50
1.0
3.0
20
GC44933
750
0.75
0.8
5.0
10
GC4494
750
1.30
0.35
6.0
7
GC4495
750
2.50
0.30
7.5
5
1. Capacitance is measured at 1 MHz and -50 volts.
2. Resistance is measured using transmission loss techniques using a 30 style package.
3. These devices are not available in all case styles. Please consult the factory for specific package styles offered.
DEVICE NOTES
The tabulated specifications above are for package style 00. Diodes are
also available in various packaged configurations. Some limitations apply.
Consult factory for details.
Each type offers trade offs in series resistance, junction capacitance, carrier
lifetime and breakdown voltage; the proper choice of which depends on the
end application. Reverse polarity diodes (NIP) and faster speed PIN and
NIP diodes are also available. (See data sheets for GC4500, GC4200, and
GC4300 series respectively.)
Copyright 2006
Rev: 2009-02-03
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2

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