MJE802(2002) 查看數據表（PDF） - ON Semiconductor

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MJE802
(Rev.:2002)

Plastic Darlington Complementary Silicon Power Transistors

ON Semiconductor 

MJE700 MJE702 MJE703 MJE800 MJE802 MJE803

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

ąD1, MUST BE FAST RECOVERY TYPE, e.g.:

ąą1N5825 USED ABOVE IB ≈ 100 mA

ąąMSD6100 USED BELOW IB ≈ 100 mA

VCC

-ā30 V

RC

TUT

V2

RB

APPROX

+ā8.0 V

0

51 D1

≈ 6.0 k ≈ 150

V1

APPROX

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 µs

+ 4.0 V

For td and tr, D1 id disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

SCOPE

Figure 2. Switching Times Test Circuit

4.0

VCC = 30 V IB1 = IB2

ts

IC/IB = 250 TJ = 25°C

2.0

tf

1.0

0.8

0.6

tr

0.4

0.2

0.04 0.06

td @ VBE(off) = 0

PNP

NPN

0.1

0.2

0.4 0.6 1.0 2.0

4.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

1.0

0.7

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07 0.01

0.05

0.03 SINGLE PULSE

0.02

0.01

0.01 0.02 0.03 0.05

θJC(t) = r(t) θJC

θJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

t, TIME (ms)

Figure 4. Thermal Response (MJE700, 800 Series)

100 200 300 500 1000

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