MJE800(2002) 查看數據表（PDF） - ON Semiconductor
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MJE800 Datasheet PDF : 8 Pages
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MJE700 MJE702 MJE703 MJE800 MJE802 MJE803
ACTIVE–REGION SAFE–OPERATING AREA
10
7.0
5.0
5.0Ăms
1.0Ăms
100õs
10
7.0
5.0
5.0Ăms
1.0Ăms
3.0
2.0
dc
3.0
2.0
dc
100õs
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE702, 703
MJE700
7.0 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. MJE700 Series
1.0
TJ = 150°C
0.7
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.3
SECOND BREAKDOWN LIMITED
0.2
MJE802, 803
0.1
5.0 7.0 10
MJE800
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. MJE800 Series
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 are based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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