MMBTA63 查看數據表（PDF） - Fairchild Semiconductor

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MMBTA63

PNP Darlington Transistor

Fairchild Semiconductor 

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol

Parameter

Test Condition

Off Characteristics

BV(BR)CES Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0

ICBO

Collector-Cutoff Current

VCB = -30V, IE = 0

IEBO

Emitter-Cutoff Current

VEB = -10V, IC = 0

On Characteristics *

hFE

DC Current Gain

VCE(sat) Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

Small Signal Characteristics

IC = -10mA, VCE = -5.0V

IC = -100mA, VCE = -5.0V

IC = -100mA, IB = -0.1mA

IC = -100mA, VCE = -5.0V

fT

Current Gain - Bandwidth Product IC = -10mA, VCE = -5.0V,

f = 100MHz

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Min.

-30

5,000

10,000

125

Max.

-100

-100

-1.5

-2.0

Units

V

nA

nA

V

V

MHz

Typical Performance Characteristics

Typical Pulsed Current Gain

vs Collector Current

50

V CE = 5V

40

30

125 °C

20

25 °C

10

- 40 °C

0

0.01

0.1

1

I C - COLLECTOR CURRENT (A)

Figure 1. Typical Pulsed Current Gain

vs Collector Current

Collector-Emitter Saturation

Voltage vs Collector Current

1.6

ββ = 1000

1.2

- 40 °C

0.8

25 °C

125 °C

0.4

0

0 .00 1

0 .0 1

0.1

1

I C - COLLECTOR CURRENT (A)

Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current

© 2010 Fairchild Semiconductor Corporation

MPSA63 / MMBTA63 / PZTA63 Rev. A1

2

www.fairchildsemi.com

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