PMBTA64 查看數據表（PDF） - Philips Electronics
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PMBTA64 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
PMBTA64
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEon
fT
collector-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = −30 V
−
IC = 0; VEB = −10 V;
−
IC = −10 mA; VCE = −5 V; (see Fig.2) 10000
IC = −100 mA; VCE = −5 V; (see Fig.2) 20000
IC = −100 mA; IB = −0.1 mA
−
IC = −100 mA; VCE = −5 V
−
IC = −10 mA; VCE = −50 V;
125
f = 100 MHz
MAX.
−100
−100
−
−
−1.5
−2
−
UNIT
nA
nA
V
V
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
VCE = −2 V.
1999 Apr 13
MGD836
−10
−102
−103
IC (mA)
Fig.2 DC gain current; typical values.
3
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