BC856S 查看數據表（PDF） - Philips Electronics
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BC856S Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Product specification
BC856S
104
handbook, halfpage
VCEsat
(mV)
103
MCD763
102
(1)
(3) (2)
10
10−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.2 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
MCD764
800
(1)
(2)
600
400
(3)
20010−2
10−1
1
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
handbook5, 0fu0ll pagewidth
hFE
400
(1)
300
(2)
200
(3)
100
MCD765
0
10−2
10−1
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.4 DC current gain as a function of collector current; typical values.
1999 Aug 24
4
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