BCP52 查看數據表（PDF） - Philips Electronics
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BCP52 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium power transistors
Product specification
BCP51; BCP52; BCP53
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
95
K/W
14
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
hFE
VCEsat
VBE
fT
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BCP53-10
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 125 °C
IC = 0; VEB = −5 V
VCE = −2 V; see Fig.2
IC = −5 mA
IC = −150 mA
IC = −500 mA
IC = 150 mA; VCE = −2 V; see Fig.2
BCP51-16; BCP52-16; BCP53-16
collector-emitter saturation voltage
base-emitter voltage
transition frequency
IC = −500 mA; IB = −50 mA
IC = −500 mA; VCE = −2 V
IC = −10 mA; VCE = −5 V;
f = 100 MHz
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−10 µA
−
−
−100 nA
40 −
−
63 −
250
25 −
−
63 −
160
100 −
250
−
−
−0.5 V
−
−
−1 V
−
115 −
MHz
1999 Apr 08
3
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