MPSA92 查看數據表（PDF） - Zetex => Diodes

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MPSA92

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE2 – MARCH 94

FEATURES

* High voltage

MPSA92

APPLICATIONS

* Telephone dialler circuits

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at Tamb= 25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

IC

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

-300

-300

-5

-500

680

-55 to +175

UNIT

V

V

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT

Collector-Base

V(BR)CBO -300

V

Breakdown Voltage

Collector-Emitter

V(BR)CEO -300

V

Breakdown Voltage

Emitter-Base

V(BR)EBO -5

V

Breakdown Voltage

Collector Cut-Off

ICBO

Current

-0.25 µA

Emitter Cut-Off Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.1 µA

-0.5 V

Base-Emitter

Saturation Voltage

VBE(sat)

-0.9 V

Static Forward Current hFE

25

Transfer Ratio

40

25

Transition

Frequency

fT

50

MHz

Output Capacitance

Cobo

6

pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-84

CONDITIONS.

IC=-100µA, IE=0

IC=-1mA, IB=0*

IE=-10µA, IC=0

VCB=-200V, IE=0

VEB=-3V, IE=0

IC=-20mA, IB=-2mA*

IC=-20mA, IB=-2mA*

IC=-1mA, VCE=10V*

IC=-10mA, VCE=10V*

IC=-30mA,VCE=-10V*

IC=-10mA, VCE=-20V

f=20MHz

VCB=-20V, f=1MHz

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