ZTX751 查看數據表（PDF） - Zetex => Diodes

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ZTX751

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Zetex => Diodes 

ZTX750

ZTX751

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

ZTX750

ZTX751

SYMBOL

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Transition

Frequency

fT

100 140

100 140

MHz IC=-100mA, VCE=-5V

f=100MHz

Switching Times ton

40

40

ns

toff

450

450

ns

Output

Capacitance

Cobo

30

30 pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

IC=-500mA, VCC=-10V

IB1=IB2=-50mA

VCB=10V f=1MHz

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

Thermal Resistance:Junction to Ambient1

Rth(j-amb)1

175

Junction to Ambient2

Rth(j-amb)2†

116

Junction to Case

Rth(j-case)

70

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

UNIT

°C/W

°C/W

°C/W

2.5

2.0

1.5

1.0

0.5

AmbieCnat steemtemppeerraattuurree

0

-40 -20 0 20 40 60 80 100 120 140 160 180 200

T -Temperature (°C)

Derating curve

200

D=1 (D.C.)

t1 D=t1/tP

tP

100

D=0.5

D=0.2

D=0.1

Single Pulse

0

0.0001 0.001 0.01 0.1

1

10

100

Pulse Width (seconds)

Maximum transient thermal impedance

3-258

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