PZT2907 查看數據表（PDF） - Infineon Technologies

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PZT2907

PNP Silicon Switching Transistors

Infineon Technologies 

PZT 2907

PZT 2907 A

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

IC = 10 mA, IB = 0

PZT 2907

40

–

PZT 2907 A

60

–

Collector-base breakdown voltage

V(BR)CB0

IC = 10 µA, IB = 0

PZT 2907

60

–

PZT 2907 A

60

–

Emitter-base breakdown voltage

IE = 10 µA, IE = 0

V(BR)EB0 5

–

Collector-base cutoff current

ICB0

VCB = 50 V, IE = 0

PZT 2907

–

–

PZT 2907 A

–

–

VCB = 50 V, IE = 0, TA = 150 ˚C

PZT 2907

–

–

PZT 2907 A

–

–

Emitter-base cutoff current

VEB = 3 V, IC = 0

IEB0

–

–

Collector-emitter cutoff current

VCE = 30 V, + VBE = 0.5 V

ICEV

–

–

Collector-base cutoff current

VCE = 30 V, + VBE = 0.5 V

IEBV

–

–

DC current gain1)

IC = 0.1 mA, VCE = 10 V

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

hFE

PZT 2907

PZT 2907 A

PZT 2907

PZT 2907 A

PZT 2907

PZT 2907 A

PZT 2907

PZT 2907 A

PZT 2907

PZT 2907 A

35

–

75

–

50

–

100 –

75

–

100 –

100 –

100 –

30

–

50

–

V

–

–

–

–

–

20 nA

10 nA

20

µA

10

µA

10 nA

50

50

–

–

–

–

–

–

–

300

300

–

–

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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