2N4403 查看數據表（PDF） - Philips Electronics
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2N4403 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
2N4403
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0 mA; VCB = −40 V
−
IC = 0 mA; VEB = −5 V
−
VCE = −1 V; see Fig.2
IC = −0.1 mA
30
IC = −1 mA
60
IC = −10 mA
100
VCE = −2 V
IC = −150 mA
100
IC = −500 mA
20
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IC = −150 mA; IB = −15 mA
−
IC = −500 mA; IB = −50 mA
−
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
IC = ic = 0; VEB = −500 mV; f = 1 MHz −
IC = −20 mA; VCE = −10 V; f = 100 MHz 200
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA;
−
IBoff = 15 mA
−
−
−
−
−
MAX.
−50
−50
−
−
−
300
−
−400
−750
−950
−1.3
8.5
30
−
40
15
30
350
300
50
UNIT
nA
nA
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
1999 Apr 23
3
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