SS9012 查看數據表（PDF） - Fairchild Semiconductor

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SS9012

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

SS9012

1W Output Amplifier of Potable Radios in

Class B Push-pull Operation.

• High total power dissipation. (PT=625mW)

• High Collector Current. (IC= -500mA)

• Complementary to SS9013

• Excellent hFE linearity.

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

1

TO-92

1. Emitter 2. Base 3. Collector

Ratings

-40

-20

-5

-500

625

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

VCE (sat)

VBE (sat)

VBE (on)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = -100µA, IE =0

IC = -1mA, IB =0

IE = -100µA, IC =0

VCB = -25V, IE =0

VEB = -3V, IC =0

VCE = -1V, IC = -50mA

VCE = -1V, IC = -500mA

IC = -500mA, IB = -50mA

IC = -500mA, IB = -50mA

VCE = -1V, IC = -10mA

Min.

-40

-20

-5

64

40

-0.6

Typ.

120

90

-0.18

-0.95

-0.67

Max.

-100

-100

202

Units

V

V

V

nA

nA

-0.6

V

-1.2

V

-0.7

V

hFE Classification

Classification

hFE1

D

64 ~ 91

E

78 ~ 112

F

96 ~ 135

G

112 ~ 166

H

144 ~ 202

©2002 Fairchild Semiconductor Corporation

Rev. A4, November 2002

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