SS9012 查看數據表（PDF） - Fairchild Semiconductor

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产品描述 (功能)

生产厂家

SS9012

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-50

IB=-300µA

IB=-250µA

-40

IB=-200µA

-30

IB=-150µA

-20

IB=-100µA

IB=-50µA

-10

-0

-0

-10

-20

-30

-40

-50

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-1000

VBE(sat)

-100

VCE(sat)

-10

-10

IC=10IB

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

VCE = -1V

10

-10

-100

IC[mA], COLLECTOR CURRENT

-1000

Figure 2. DC current Gain

1000

100

VCE=-6V

10

1

-1

-10

-100

-1000

-10000

IC[mA], COLLECTOR CURRENT

Figure 4. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation

Rev. A4, November 2002

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