NE8500200 查看數據表（PDF） - NEC => Renesas Technology
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NE8500200 Datasheet PDF : 8 Pages
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NE85002 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Total Power Disipation(*)
Drain Current
Gate Current
Channel Temperature
Storage Temperature
VDSX
VGSX
VGDX
PT
ID
IG
Tch
Tstg
15
–12
–18
13
2.5
13
175
–65 to 175
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
Drain to Source Voltage
Channel Temperature
Input Power
Gate Resistance
SYMBOL
VDS
Tch
Gcomp
Rg
MIN.
9
–
–
–
TYP.
–
–
–
–
MAX. UNIT
10
V
130
˚C
3 dBcomp
2
kΩ
V
V
V
W
A
mA
˚C
˚C
*TC = 25 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
SYMBOL
Idss
VP
gm
Rth
MIN.
950
–3.0
–
–
TYP.
–
–
600
10
MAX.
1900
–1.0
–
15
UNIT
mA
V
mS
˚C/W
TEST CONDITIONS
Vds = 2.5 V, Vgs = 0 V
Vds = 2.5 V, Ids = 8 mA
Vds = 2.5 V, Ids = Idss
2
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