ZNBG3010Q16 查看數據表（PDF） - Zetex => Diodes
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ZNBG3010Q16 Datasheet PDF : 10 Pages
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ZNBG3010
ZNBG3011
SYMBOL PARAMETER
CONDITIONS
LIMITS
UNITS
DRAIN CHARACTERISTICS
MIN. TYP. MAX.
ID
Current
⌬IDV
⌬IDT
Current Change
with VCC
with Tj
VCC= 5 to 10V
Tj=-40 to +70°C
VD1
Drain 1 Voltage:High
ZNBG3010
ID1=10mA, VPOL=15.5V
ZNBG3011
ID1=10mA, VPOL=15.5V
VD2
Drain 2 Voltage:High
ZNBG3010
ID2=10mA, VPOL=14V
ZNBG3011
ID2=10mA, VPOL=14V
VD3
Drain 3 Voltage:High
ZNBG3010
ID3=10mA, VPOL=15.5V
ZNBG3011
ID3=10mA, VPOL=15.5V
⌬VDV
⌬VDT
Voltage Change
with VCC
with Tj
VCC= 5 to 10V
Tj=-40 to +70°C
Leakage Current
IL1
Drain 1
VD1=0.1V, VPOL=14V
IL2
Drain 2
VD2=0.1V, VPOL=15.5V
POLARITY SWITCH CHARACTERISTICS
8
10
12
mA
0.2
0.05
%/V
%/°C
2.0 2.2 2.4 V
1.8 2.0 2.2 V
2.0 2.2 2.4 V
1.8 2.0 2.2 V
2.0 2.2 2.4 V
1.8 2.0 2.2 V
0.5
%/V
50
ppm
10
µA
10
µA
IPOL
Input Current
VPOL=25V
(Applied via RPOL=10kΩ
10
20
40
µA
VTPOL
Threshold Voltage (Applied via RPOL=10kΩ
14
14.75 15.5 V
TSPOL
Switching Speed
100 µs
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external
capacitors, CNB and CSUB, of 47nF are required for this purpose.
2. The characteristics are measured using an external reference resistor RCAL of value 33k wired from
pins RCAL to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all
outputs. CG, 4.7nF, are connected between gate outputs and ground, CD, 10nF, are connected
between drain outputs and ground.
4-116
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