TGA9083-EEU 查看數據表（PDF） - TriQuint Semiconductor

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产品描述 (功能)

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TGA9083-EEU

Power Amplifier

TriQuint Semiconductor 

RECOMMENDED

ASSEMBLY DIAGRAM

USING ACTIVE GATE

BIAS CIRCUIT

-5 V

100pF

100pF

.01uF

On-chip wire bond

A

B

EC

D

RF Input

TGA9083-EEU

Vd

100pF

RF Output

100pF

100pF

Vd

Bond using three (four at RFOUT) 1.0-mil diameter, 25 to 30-mil length gold bond wires at RF Input and RF Output for optimum

performance. Bond wires connected to the RF Output pad should be equal distance from center line as indicated in dra wing.

Close placement of exter nal components is essential to stability.

Drain bias ( VD) voltage should be connected to both sides of MMIC.

8

TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com

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