BUK481-100A 查看數據表（PDF） - Philips Electronics
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BUK481-100A Datasheet PDF : 8 Pages
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Philips Semiconductors
PowerMOS transistor
Product Specification
BUK481-100A
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tamb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tamb); conditions: VGS ≥ 10 V
Zth j-amb / (K/W)
1E+02 D =
0.5
BUKX81
0.2
1E+01 0.1
0.05
0.02
1E+00
P
tp
D
D = tp
T
1E-01
t
T
1E-02
1E-07
1E-05
1E-03 1E-01
t/s
1E+01 1E+03
Fig.3. Transient thermal impedance.
Zth j-amb = f(t); parameter D = tp/T
ID / A
10
1
RDS(ON) = VDS/ID
BUK481-100A
tp = 10 us
100 us
1 ms
10 ms
0.1
DC
100 ms
1s
10 s
0.01
1
10
100
VDS / V
Fig.4. Safe operating area Tamb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
ID / A
5
15
7
10
4
BUK481-100A
6.5
6
3
5.5
2
5
1
4.5
VGS / V = 4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
2
4.5 5 5.5 6
1.8
BUK481-100A
6.5
7
1.6
1.4
1.2
1
0.8
10
0.6
0.4
VGS / V = 15
0.2
0
0
1
2
3
4
5
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
January 1998
3
Rev 1.000
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