BUK481-100A 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BUK481-100A Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK481-100A
ID / A
5
4
BUK481-100A
Tj / C = 25 150
3
2
1
0
0
2
4
6
8
10
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
2
BUK481-100A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.0 a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1 A; VGS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.1 mA; VDS = VGS
ID / A
1E-02
SUB-THRESHOLD CONDUCTION SIZE 1
1E-03
1E-04
2%
typ
98 %
1E-05
1E-06
1E-07
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
C / pF
1000
BUK481-100A
Ciss
100
Coss
Crss
10
0
10
20
30
40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
January 1998
4
Rev 1.000
Share Link: 