BUK472-100A 查看數據表（PDF） - Philips Electronics
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BUK472-100A Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Isolated version of BUK452-100A/B
Product specification
BUK472-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The
device is intended for use in Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
BUK472
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-100A
100
6.6
22
150
0.25
MAX.
-100B
100
6.1
22
150
0.3
UNIT
V
A
W
˚C
Ω
PINNING - SOT186A
PIN
DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
-
RGS = 20 kΩ
-
-
-
ID
Drain current (DC)
Ths = 25 ˚C
-
ID
Drain current (DC)
Ths = 100 ˚C
-
IDM
Drain current (pulse peak value) Ths = 25 ˚C
-
Ptot
Total power dissipation
Tstg
Storage temperature
Tj
Junction temperature
Ths = 25 ˚C
-
-
- 55
-
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MAX.
100
100
30
-100A
6.6
4.1
26
-100B
6.1
3.8
24
22
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
-
- 5.68 K/W
-
55
- K/W
November 1996
1
Rev 1.200
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