BUK472-100A 查看數據表（PDF） - Philips Electronics
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BUK472-100A Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Product specification
BUK472-100A/B
ID / A
20
20
15
VGS / V =
10
15
BUK452-100A
8
7
10
6
5
5
4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
1.0
4.5 5 5.5 6
0.8
0.6
BUK452-100A
6.5
VGS / V =
7 7.5
8
10
0.4
20
0.2
0
0
Fig.6.
2 4 6 8 10 12 14 16 18 20
ID / A
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
ID / A
20
16
12
Tj / C =
BUK452-100A
25
150
8
4
0
0
2
4
6
8
10
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
5
BUK452-100A
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.0 a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5.5 A; VGS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
November 1996
4
Rev 1.200
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